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STIPN2M50-H 数据表(PDF) 13 Page - STMicroelectronics

部件名 STIPN2M50-H
功能描述  SLLIMM-nano IPM, 3-phase inverter, 2 A, 1.7 Ω max., 500 V MOSFET
PDF  19 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STIPN2M50-H 数据表(HTML) 13 Page - STMicroelectronics

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5.1
Guidelines
Input signals HIN, LIN are active high logic. A 375 kΩ (typ.) pull-down resistor is built-in for each input. To
avoid input signal oscillation, the wiring of each input should be as short as possible, and the use of RC
filters (R1, C1) on each input signal is suggested. The filters should be with a time constant of about 100 ns
and placed as close as possible to the IPM input pins.
The use of a bypass capacitor CVCC (aluminum or tantalum) can reduce the transient circuit demand on the
power supply. Also, to reduce any high-frequency switching noise distributed on the power lines, a
decoupling capacitor C2 (100 to 220 nF, with low ESR and low ESL) should be placed as close as possible
to the Vcc pin and in parallel with the bypass capacitor.
The use of an RC filter (RSF, CSF) is recommended to prevent protection circuit malfunction. The time
constant (RSF x CSF) should be set to 1 μs and the filter must be placed as close as possible to the CIN pin.
The SD is an input/output pin (open-drain type if it is used as output). The capacitor CSD of the filter on SD
should be fixed no higher than 3.3 nF in order to assure the SD activation time τA ≤ 500 ns. Besides, the
filter should be placed as close as possible to the SD pin.
The decoupling capacitor C3 (from 100 to 220 nF, ceramic with low ESR and low ESL), in parallel with each
Cboot, filters high-frequency disturbance. Both Cboot and C3 (if present) should be placed as close as
possible to the U, V, W and Vboot pins. Bootstrap negative electrodes should be connected to U, V, W
terminals directly and separated from the main output wires.
To avoid overvoltage on the Vcc pin, a Zener diode (Dz1) can be used. Similarly on the Vboot pin, a Zener
diode (Dz2) can be placed in parallel with each Cboot.
The use of the decoupling capacitor C4 (100 to 220 nF, with low ESR and low ESL) in parallel with the
electrolytic capacitor Cvdc is useful to prevent surge destruction. Both capacitors C4 and Cvdc should be
placed as close as possible to the IPM (C4 has priority over Cvdc).
By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals
without an opto-couplers is possible.
Low-inductance shunt resistors have to be used for phase leg current sensing.
In order to avoid malfunctions, the wiring on N pins, the shunt resistor and PWR_GND should be as short as
possible.
The connection of SGN_GND to PWR_GND on one point only (close to the shunt resistor terminal) can
reduce the impact of power ground fluctuation.
These guidelines ensure the specifications of the device for application designs. For further details, please refer to
the relevant application note.
Table 14. Recommended operating conditions
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VPN
Supply voltage
Applied between P-Nu, Nv, Nw
300
400
V
VCC
Control supply voltage
Applied between VCC-GND
13.5
15
18
V
VBS
High-side bias voltage
Applied between VBOOTi-OUTi
for i = U, V, W
13
18
V
tdead
Blanking time to prevent arm-short
For each input signal
1
µs
fPWM
PWM input signal
-40 °C < TC < 100 °C
-40 °C < TJ < 125 °C
25
kHz
TC
Case operation temperature
100
°C
STIPN2M50-H
Guidelines
DS11935 - Rev 6
page 13/19



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