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STIPN2M50-H 数据表(PDF) 13 Page - STMicroelectronics |
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STIPN2M50-H 数据表(HTML) 13 Page - STMicroelectronics |
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13 / 19 page ![]() 5.1 Guidelines • Input signals HIN, LIN are active high logic. A 375 kΩ (typ.) pull-down resistor is built-in for each input. To avoid input signal oscillation, the wiring of each input should be as short as possible, and the use of RC filters (R1, C1) on each input signal is suggested. The filters should be with a time constant of about 100 ns and placed as close as possible to the IPM input pins. • The use of a bypass capacitor CVCC (aluminum or tantalum) can reduce the transient circuit demand on the power supply. Also, to reduce any high-frequency switching noise distributed on the power lines, a decoupling capacitor C2 (100 to 220 nF, with low ESR and low ESL) should be placed as close as possible to the Vcc pin and in parallel with the bypass capacitor. • The use of an RC filter (RSF, CSF) is recommended to prevent protection circuit malfunction. The time constant (RSF x CSF) should be set to 1 μs and the filter must be placed as close as possible to the CIN pin. • The SD is an input/output pin (open-drain type if it is used as output). The capacitor CSD of the filter on SD should be fixed no higher than 3.3 nF in order to assure the SD activation time τA ≤ 500 ns. Besides, the filter should be placed as close as possible to the SD pin. • The decoupling capacitor C3 (from 100 to 220 nF, ceramic with low ESR and low ESL), in parallel with each Cboot, filters high-frequency disturbance. Both Cboot and C3 (if present) should be placed as close as possible to the U, V, W and Vboot pins. Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. • To avoid overvoltage on the Vcc pin, a Zener diode (Dz1) can be used. Similarly on the Vboot pin, a Zener diode (Dz2) can be placed in parallel with each Cboot. • The use of the decoupling capacitor C4 (100 to 220 nF, with low ESR and low ESL) in parallel with the electrolytic capacitor Cvdc is useful to prevent surge destruction. Both capacitors C4 and Cvdc should be placed as close as possible to the IPM (C4 has priority over Cvdc). • By integrating an application-specific type HVIC inside the module, direct coupling to the MCU terminals without an opto-couplers is possible. • Low-inductance shunt resistors have to be used for phase leg current sensing. • In order to avoid malfunctions, the wiring on N pins, the shunt resistor and PWR_GND should be as short as possible. • The connection of SGN_GND to PWR_GND on one point only (close to the shunt resistor terminal) can reduce the impact of power ground fluctuation. These guidelines ensure the specifications of the device for application designs. For further details, please refer to the relevant application note. Table 14. Recommended operating conditions Symbol Parameter Test conditions Min. Typ. Max. Unit VPN Supply voltage Applied between P-Nu, Nv, Nw 300 400 V VCC Control supply voltage Applied between VCC-GND 13.5 15 18 V VBS High-side bias voltage Applied between VBOOTi-OUTi for i = U, V, W 13 18 V tdead Blanking time to prevent arm-short For each input signal 1 µs fPWM PWM input signal -40 °C < TC < 100 °C -40 °C < TJ < 125 °C 25 kHz TC Case operation temperature 100 °C STIPN2M50-H Guidelines DS11935 - Rev 6 page 13/19 |
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