UT6MB5

Datasheet

l

lGate charge characteristics (Ta = 25°C)

<Tr1>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Total gate charge

Qg*4

VDD ⋍ 20V

ID = 5.0A

VGS = 10V

-

3.5

-

nC

VGS = 4.5V

-

1.8

-

Gate - Source charge

Qgs*4

-

1.1

-

Gate - Drain charge

Qgd*4

-

0.3

-

<Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Total gate charge

Qg*4

VDD ⋍ -20V

ID = -3.5A

VGS = -10V

-

6.2

-

nC

VGS = -4.5V

-

3.3

-

Gate - Source charge

Qgs*4

-

1.4

-

Gate - Drain charge

Qgd*4

-

1.1

-

l

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

<Tr1>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Continuous forward current

IS

Ta = 25℃

-

-

1.67

A

Pulse forward current

ISP*1

-

-

20

Forward voltage

VSD*4

VGS = 0V, IS = 1.67A

-

-

1.2

V

Reverse recovery time

trr*4

IS = 5.0A, VGS = 0V

di/dt = 100A/μs

-

18

-

ns

Reverse recovery charge

Qrr*4

-

11

-

nC

<Tr2>

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Continuous forward current

IS

Ta = 25℃

-

-

-1.67

A

Pulse forward current

ISP*1

-

-

-14

Forward voltage

VSD*4

VGS = 0V, IS = -1.67A

-

-

-1.2

V

Reverse recovery time

trr*4

IS = -3.5A, VGS = 0V

di/dt = 100A/μs

-

22

-

ns

Reverse recovery charge

Qrr*4

-

23

-

nC

www.rohm.com

© 2022 ROHM Co., Ltd. All rights reserved.

4/19

20230126 - Rev.002