STTH30R06D datasheet(3/8 Pages) STMICROELECTRONICS

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STTH30R06

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Figure

Relative

variation

thermal

impedance junction to case versus pulse

duration

Figure 4: Peak reverse recovery current versus

dIF/dt (typical values)

Figure 5: Reverse recovery time versus dIF/dt

(typical values)

Figure 6: Reverse recovery charges versus

dIF/dt (typical values)

Figure 7: Softness factor versus dIF/dt (typical

values)

Figure 8: Relative variations of dynamic

parameters versus junction temperature

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

t (s)

Single pulse

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

FF(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

I =0.25 x I

FF(AV)

V =400V

T =125°C

100

150

200

400

600

800

1000

t (ns)

dI /dt(A/µs)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

I =2 x I

F(AV)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

200

400

600

800

1000

Q (µC)

I =2 x I

F(AV)

I=I

FF(AV)

I =0.5 x I

FF(AV)

V =400V

T =125°C

dI /dt(A/µs)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

100

150

200

250

300

350

400

450

500

S factor

I2 x I

T =125°C

FF(AV)

≤

V =400V

dI /dt(A/µs)

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

100

125

IRM

QRR

S factor

T (°C)

I=I

Reference: T =125°C

FF(AV)

V =400V

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