IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXFK 21N100Q

IXFX 21N100Q

V

0.2

0.4

0.6

0.8

1.0

0

5

10

15

20

25

Pulse Width - Seconds

0.001

0.010

0.100

Gate Charge - nC

0

25

50

75

100

125

150

175

0.0

2.5

5.0

7.5

10.0

VDS = 500 V

ID = 10.5 A

IG = 10 mA

TJ = 125oC

TJ = 25oC

0.300

V

0

5

10

15

20

25

30

35

40

50

250

500

2500

5000

100

1000

10000

f = 1MHz

Single Pulse

Ciss

Coss

Crss

Fig. 9. Source Current vs. Source to Drain Voltage

Fig. 7. Gate Charge Characteristic Curve

Fig. 8. Capacitance Curves

Fig. 10. Thermal Impedance