Figure 11. AC measurement I/O waveform

0.8VCC

0.2VCC

0.7VCC

0.3V CC

Input and output

Timing reference levels

Input voltage levels

Table 11. Input parameters

Symbol

Parameter(1)

Test condition

Min.

Max.

Unit

CIN

Input capacitance (SDA)

-

-

8

pF

CIN

Input capacitance (other pins)

-

-

6

pF

ZL

Input impedance (E2, E1, E0, WC)(2)

VIN < 0.3 VCC

30

-

kΩ

ZH

VIN > 0.7 VCC

500

-

kΩ

1. Characterized only, not tested in production.

2. E2, E1, E0 input impedance when the memory is selected (after a start condition).

Table 12. Cycling performance by groups of four bytes

Symbol

Parameter

Test condition

Max.

Unit

Ncycle

Write cycle endurance(1)

TA ≤ 25 °C, VCC(min) < VCC < VCC(max)

4,000,000

Write cycle(2)

TA = 85 °C, VCC(min) < VCC < VCC(max)

1,200,000

1. The write cycle endurance is defined by characterization and qualification. For devices embedding the ECC functionality ,

the write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an

integer.

2. A Write cycle is executed when either a page write, a byte write, a write identification page or a lock identification page

instruction is decoded. When using the byte write, the page write or the write identification page, refer also to

Section 5.1.5 ECC (error correction code) and write cycling

Table 13. Memory cell data retention

Parameter

Test condition

Min.

Unit

Data retention(1)

TA = 55 °C

200

Year

1. The data retention behaviour is checked in production, while the data retention limit defined in this table is extracted from

characterization and qualification results.

M24512-W M24512-R M24512-DF

DC and AC parameters

DS6520 - Rev 31

page 21/47