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P0111DN 数据表(PDF) 4 Page - STMicroelectronics

部件名 P0111DN
功能描述  Sensitive high immunity SCRs up to 0.8 A
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

P0111DN 数据表(HTML) 4 Page - STMicroelectronics

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Characteristics
P011xx
4/9
Figure 5.
Relative variation of gate trigger,
holding and latching current versus
junction temperature
Figure 6.
Relative variation of holding
current versus gate-cathode
resistance (typical values)
-40
-20
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
T (°C)
j
I,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH & I
R
= 1k
L
GK
Ω
typical values
1E-2
1E-1
1E+0
1E+1
0
2
4
6
8
10
12
14
16
18
20
R(k )
GK
Ω
I [R
] / I [
=1k ]
HGK
H
Ω
RGK
Tj = 25°C
Figure 7.
Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values).
Figure 8.
Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1
1.0
10.0
R(k )
GK
Ω
dV/dt[R
] / dV/dt[
=1k ]
GK
Ω
RGK
Tj = 125°C
V = 0.67 x V
D
DRM
0123
4567
0
2
4
6
8
10
C
(nF)
GK
dV/dt[C
] / dV/dt[
=1k ]
GK
Ω
RGK
T
V = 0.67 x V
= 125°C
R
= 1k
D
DRM
GK
j
Ω
Figure 9.
Surge peak on-state current versus
number of cycles
Figure 10.
Non-repetitive surge peak on-state
current and corresponding value
of I²t
I
(A)
TSM
1
10
100
1000
0
1
2
3
4
5
6
7
8
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T
=25°C
amb
t =10ms
p
One cycle
I
(A), I t (A s)
TSM
22
100.0
10.0
1.0
0.1
0.01
0.10
1.00
10.00
T initial = 25°C
j
I t
2
ITSM
t (ms)
p
sinusoidal pulse with
width t < 10ms
p



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