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STP3NK90Z 数据表(PDF) 2 Page - STMicroelectronics

部件名 STP3NK90Z
功能描述  N-channel 900 V, 3.6 Ω typ., 3 A SuperMESH™ Power MOSFETs in DPAK, TO-220 and TO-220FP packages
PDF  24 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP3NK90Z 数据表(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK, TO-220
TO-220FP
VDS
Drain-source voltage
900
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
3
3 (1)
A
ID
Drain current (continuous) at TC = 100 °C
1.89
1.89 (1)
A
IDM (2)
Drain current (pulsed)
12
12 (1)
A
PTOT
Total dissipation at TC = 25 °C
90
25
W
ESD
Gate-source human body model
(R = 1,5 kΩ, C = 100 pF)
4
kV
dv/dt (3)
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s; Tc = 25 °C)
2.5
kV
Tj
Operating junction temperature range
-55 to 150
°C
Tstg
Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 3 A, di/dt ≤ 200 A/μs, VDS(peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220
TO-220FP
Rthj-case
Thermal resistance junction-case
1.38
5
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
Rthj-pcb (1)
Thermal resistance junction-pcb
50
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR (1)
Avalanche current, repetitive or not-repetitive
3
A
EAS (2)
Single pulse avalanche energy
180
mJ
1. Pulse width limited by Tjmax.
2. Starting Tj = 25°C, ID = IAR, VDD = 50 V.
STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP
Electrical ratings
DS2980 - Rev 3
page 2/24



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