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STB55NF06 数据表(PDF) 3 Page - STMicroelectronics |
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STB55NF06 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 19 page ![]() STB55NF06, STP55NF06, STP55NF06FP Electrical ratings Doc ID 7544 Rev 11 3/19 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220, D2PAK TO-220FP VDS Drain-source voltage 60 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 50 50(1) 1. Refer to soa for the max allowable current value on FP-type due to Rth value A ID Drain current (continuous) at TC = 100 °C 35 35(1) A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 200 200(1) A Ptot Total dissipation at TC = 25 °C 110 30 W Derating factor 0.73 0.20 W/°C EAS (3) 3. Starting Tj = 25 °C, VDD = 30 V, ID =25 A Single pulse avalanche energy 340 mJ dv/dt (4) 4. ISD ≤50 A, di/dt ≤400 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 7 V/ns VISO Insulation withstand voltage (DC) 2500 V Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit D2PAK TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 1.36 5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W |
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