Characteristics

STPS10170C

2/10

DocID12541 Rev 4

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode1) x R

th(j-c)(Per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.65x IF(AV) + 0.02 x IF

2

(RMS)

Table 2. Absolute ratings (limiting values per diode at Tamb = 25 °C unless otherwise stated)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

Forward rms current

10

A

IF(AV)

Average forward current,

δ = 0.5, square wave T

c = 155 °C

Per diode

5

A

Total

10

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

75

A

PARM

(1)

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

220

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature(2)

175

°C

1.

For pulse time duration derating, please refer to Figure 3. More details regarding the avalanche energy measurements and

diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

<

1

Rth(j-a)

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

4

°C/W

Total

2.4

Rth(c)

Coupling

0.7

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

--

10

µA

Tj = 125 °C

-

-

10

mA

VF

(2)

Forward voltage drop

Tj = 25 °C

IF = 5 A

-

-

0.92

V

Tj = 125 °C

-

0.69

0.75

Tj = 25 °C

IF = 10 A

--

1.0

Tj = 125 °C

-

0.79

0.85

1.

Pulse test: tp = 5 ms,  < 2%

2.

Pulse test: tp = 380 µs,  < 2%