Figure 5. Relative variation of thermal impedance junction

to case versus pulse duration (TO-220AB, D²PAK, I²PAK)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

tP(s)

Single pulse

Zth(j-c)/Rth(j-c)

Figure 6. Relative variation of thermal impedance junction

to case versus pulse duration (TO-220FPAB)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

tP(s)

Single pulse

Zth(j-c)/Rth(j-c)

Figure 7. Junction capacitance versus reverse voltage

applied (typical values)

100

1000

10000

1

10

100

VR(V)

F = 1 MHz

VOSC = 30 mVRMS

Tj= 25 °C

C(pF)

Figure 8. Forward voltage drop versus forward current

(anode terminals short circuited)

0

5

10

15

20

25

30

35

40

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

VF (V)

Tj= 25 °C

(Maximum values)

Tj= 125 °C

(Maximum values)

Tj= 125 °C

(Typical values)

IF(A)

Figure 9. Thermal resistance junction to ambient versus copper surface under tab for D²PAK

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

Rth(j-a) (°C/W)

D²PAK

Epoxy printed board FR4, copper thickness = 35 µm

SCu(cm²)

STPS20M100S

Characteristics (curves)

DS6169 - Rev 5

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