CSC3255 datasheet(1/3 Pages) CDIL

部件名	CSC3255

功能描述	NPN SILICON EPITAXIAL POWER TRANSISTOR

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制造商	CDIL [Continental Device India Limited]

网页	http://www.cdilsemi.com

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NPN SILICON EPITAXIAL POWER TRANSISTOR

CSC3255

TO-220

High-Speed Switching Applications.

Complementary CSA1291

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

80

V

Collector -Emitter Voltage

VCEO

60

V

Emitter Base Voltage

VEBO

5.0

V

Collector Current

IC

10.0

A

Peak

ICP

12.0

A

Collector Power Dissipation @ Tc=25 deg C

PC

40.0

W

Junction Temperature

Tj

150

deg C

Storage Temperature Range

Tstg

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

60

-

V

Collector Base Voltage

VCBO

IC=1mA, IE=0

80

-

V

Emitter Base Voltage

VEBO

IE=1mA, IC=0

5.0

-

V

Collector Cut off Current

ICBO

VCB=40V, IE=0

-

100

uA

Emitter Cut off Current

IEBO

VBE=4V,IC=0

-

100

uA

Collector Emitter Saturation Voltage

VCE(Sat) IC=5A, IB=0.25A

-

0.6

V

DC Current Gain

hFE

IC=1A, VCE=2V

70

-

250

Dynamic Characteristics

Transition Frequency

ft

VCE=5V, IC=1A,

-

100

-

MHz

Switching Time

Turn on time

ton

VCC=20V, VBE=5V

-

0.1

-

us

Storage time

tstg

IB1=1B2=.0.25A, IC=5A,

-

0.5

-

us

Fall time

tf

Pw=20us, Duty Cycle=1%

-

0.1

-

us

hFE Classification

Q : 70 -140 ;

R : 100 - 200 ;

S : 160 - 250 ;

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

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