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STPS3045CR 数据表(PDF) 2 Page - STMicroelectronics |
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STPS3045CR 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() STPS3045CT/CG/CR/CP/CPI/CW 2/9 Symbol Parameter Value Unit Rth (j-c) Junction to case TO-220AB D 2PAK / I2PAK Per diode Total 1.60 0.85 °C/W SOT-93 TO-247 Per diode Total 1.5 0.8 TOP-3I Per diode Total 2.2 1.6 Rth (c) TO-220AB D 2PAK / I2PAK SOT-93 TO-247 Coupling 0.10 TOP-3I Coupling 1.0 When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c) THERMAL RESISTANCES Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) RMS forward current 30 A IF(AV) Average forward current δ = 0.5 TO-220AB D 2PAK / I2PAK SOT-93 TO-247 Tc = 155°C Per diode Per device 15 30 A TOP-3I Tc = 150°C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 220 A IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz 1A IRSM Non repetitive peak reverse current tp = 100 µs square 3A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature * 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/ µs ABSOLUTE RATINGS (limiting values, per diode) *: dPtot dTj Rth j a < − 1 () thermal runaway condition for a diode on its own heatsink |
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