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H5TC4G63CFR-RDL 数据表(PDF) 15 Page - Hynix Semiconductor

部件名 H5TC4G63CFR-RDL
功能描述  4Gb DDR3L SDRAM Lead-Free&Halogen-Free (RoHS Compliant)
PDF  33 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

H5TC4G63CFR-RDL 数据表(HTML) 15 Page - Hynix Semiconductor

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Rev. 1.4/ Oct. 2015
15
Table 1 -Timings used for IDD and IDDQ Measurement-Loop Patterns
Table 2 -Basic IDD and IDDQ Measurement Conditions
Symbol
DDR3-1066
DDR3-1333
DDR3-1600
DDR3-1866
Unit
7-7-7
9-9-9
11-11-11
13-13-13
tCK
1.875
1.5
1.25
1.07
ns
CL
7
9
11
13
nCK
nRCD
79
11
13
nCK
nRC
27
33
39
45
nCK
nRAS
20
24
28
32
nCK
nRP
79
11
13
nCK
nFAW
1KB page size
20
20
24
26
nCK
2KB page size
27
30
32
33
nCK
nRRD
1KB page size
4
4
5
5
nCK
2KB page size
6
5
6
6
nCK
nRFC -512Mb
48
60
72
85
nCK
nRFC-1 Gb
59
74
88
103
nCK
nRFC- 2 Gb
86
107
128
150
nCK
nRFC- 4 Gb
139
174
208
243
nCK
nRFC- 8 Gb
187
234
280
328
nCK
Symbol
Description
IDD0
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT
and PRE; Command, Address, Bank Address Inputs: partially toggling according to Table 3; Data IO:
MID-LEVEL; DM: stable at 0; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see
Table 3); Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details:
see Table 3.
IDD1
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 1; BL: 8a); AL: 0; CS: High between
ACT, RD and PRE; Command, Address; Bank Address Inputs, Data IO: partially toggling according to
Table 4; DM: stable at 0; Bank Activity: Cycling with on bank active at a time: 0,0,1,1,2,2,... (see Table
4); Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see
Table 4.



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