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JS0230A1 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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JS0230A1 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor JS0230A1 FEATURES · Drain Current : ID= 13A@ TC=25℃ · Drain Source Voltage : VDSS= 300V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 300 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 45 A PD Total Dissipation @TC=25℃ 100 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃ /W |
类似零件编号 - JS0230A1 |
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类似说明 - JS0230A1 |
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