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SP3232ECN 数据表(PDF) 2 Page - Sipex Corporation |
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SP3232ECN 数据表(HTML) 2 Page - Sipex Corporation |
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2 / 20 page ![]() Date: 02/24/05 SP3222E, SP3232E True +3.0 to +5.0V RS-232 Transceivers © Copyright 2005 Sipex Corporation 2 R E T E M A R A P. N I M. P Y T. X A MS T I N US N O I T I D N O C S C I T S I R E T C A R A H C C D t n e r r u C y l p p u S3 . 00 . 1A mT , d a o l o n B M A 5 2 + = o V , C C C V 3 . 3 = t n e r r u C y l p p u S n w o d t u h S0 . 10 1 µA, D N G = N D H ST B M A 5 2 + = o V , C C C V 3 . 3 + = S T U P T U O R E V I E C E R D N A S T U P N I C I G O L W O L d l o h s e r h T c i g o L t u p n I8 . 0V 2 e t o N , N D H S , N E , N I x T H G I H d l o h s e r h T c i g o L t u p n I0 . 2 4 . 2 VV C C 2 e t o N , V 3 . 3 = V C C 2 e t o N , V 0 . 5 = t n e r r u C e g a k a e L t u p n I1 0 . 0 ±0 . 1 ± µA, N D H S , N E , N I x TT B M A 5 2 + = oC t n e r r u C e g a k a e L t u p t u O5 0 . 0 ±0 1 ± µAd e l b a s i d s r e v i e c e r W O L e g a t l o V t u p t u O4 . 0V I T U O A m 6 . 1 = H G I H e g a t l o V t u p t u OV C C 6 . 0 -V C C 1 . 0 -V I T U O A m 0 . 1 - = S T U P T U O R E V I R D g n i w S e g a t l o V t u p t u O0 . 5 ±4 . 5 ±V k 3 Ω , s t u p t u o r e v i r d ll a t a d n u o r g o t d a o l T B M A 5 2 + = oC e c n a t s i s e R t u p t u O0 0 3 Ω V C C T , V 0 = - V = + V = T U O =+ V 2 t n e r r u C t i u c r i C - t r o h S t u p t u O5 3 ± 0 7 ± 0 6 ± 0 0 1 ± A m A m V T U O V 0 = V T U O =+ V 5 1 t n e r r u C e g a k a e L t u p t u O5 2 ± µAV T U O =+ V , V 2 1 C C d e l b a s i d s r e v i r d , V 5 . 5 o t V 0 = NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V. ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device. V CC................................................................-0.3V to +6.0V V+ (NOTE 1)................................................-0.3V to +7.0V V- (NOTE 1)................................................+0.3V to -7.0V V+ + |V-| (NOTE 1)....................................................+13V I CC (DC VCC or GND current).................................±100mA Input Voltages TxIN, EN ................................................... -0.3V to +6.0V RxIN .......................................................................... ±15V Output Voltages TxOUT ...................................................................... ±15V RxOUT ........................................... -0.3V to (V CC + 0.3V) Short-Circuit Duration TxOUT ............................................................ Continuous Storage Temperature .............................. -65 °C to +150°C Power Dissipation Per Package 20-pin SSOP (derate 9.25mW/oC above +70oC) ..... 750mW 18-pin PDIP (derate 15.2mW/oC above +70oC) .... 1220mW 18-pin SOIC (derate 15.7mW/oC above +70oC) ... 1260mW 20-pin TSSOP (derate 11.1mW/oC above +70oC) .. 890mW 16-pin SSOP (derate 9.69mW/oC above +70oC) ..... 775mW 16-pin PDIP (derate 14.3mW/oC above +70oC) .... 1150mW 16-pin Wide SOIC (derate 11.2mW/oC above +70oC) 900mW 16-pin TSSOP (derate 10.5mW/oC above +70oC) .. 850mW 16-pin nSOIC (derate 13.57mW/ °C above +70°C) .. 1086mW ELECTRICAL CHARACTERISTICS Unless otherwise noted, the following specifications apply for V CC = +3.0V to +5.0V with TAMB = TMIN to TMAX |
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