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STM32F103C8 数据表(PDF) 50 Page - STMicroelectronics |
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STM32F103C8 数据表(HTML) 50 Page - STMicroelectronics |
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50 / 116 page ![]() Electrical characteristics STM32F103x8, STM32F103xB 50/116 DS5319 Rev 18 5.3.6 External clock source characteristics High-speed external user clock generated from an external source The characteristics given in Table 20 result from tests performed using a high-speed external clock source, and under ambient temperature and supply voltage conditions summarized in Table 9. APB2 (up to 72 MHz) APB2-Bridge 3.75 GPIOA 6.67 GPIOB 6.53 GPIOC 6.53 GPIOD 6.53 GPIOE 6.39 SPI1 4.72 USART1 11.94 TIM1 23.33 ADC1(2) 17.50 ADC2(2) 16.07 1. The BusMatrix is automatically active when at least one master peripheral is ON (CPU or DMA). 2. Specific conditions for measuring ADC current consumption: fHCLK = 56 MHz, fAPB1 = fHCLK / 2, fAPB2 = fHCLK, fADCCLK = fAPB2 / 4, When ADON bit in the ADCx_CR2 register is set to 1, a current consumption of analog part equal to 0.65 mA must be added for each ADC. Table 19. Peripheral current consumption (continued) Peripherals µA/MHz Table 20. High-speed external user clock characteristics Symbol Parameter Conditions Min Typ Max Unit fHSE_ext User external clock source frequency(1) - 18 25 MHz VHSEH OSC_IN input pin high level voltage 0.7VDD -VDD V VHSEL OSC_IN input pin low level voltage VSS -0.3VDD tw(HSE) tw(HSE) OSC_IN high or low time(1) 1. Specified by design, not tested in production. 5- - ns tr(HSE) tf(HSE) OSC_IN rise or fall time(1) -- 20 Cin(HSE) OSC_IN input capacitance(1) -- 5 - pF DuCy(HSE) Duty cycle - 45 - 55 % IL OSC_IN Input leakage current VSS VIN VDD -- ±1 µA |
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