STB10NK60Z datasheet(2/19 Pages) STMICROELECTRONICS

部件名	STB10NK60Z

功能描述	N-channel 600V - 0.65OHM - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET

PDF	19 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

2 / 19 page

1 Absolute maximum ratings

STB10NK60Z/-1 - STP10NK60Z/FP - STW10NK60Z

2/19

Absolute maximum ratings

Table 1.

Absolute maximum ratings

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/D²/I²PAK

TO-220FP

TO-247

VDS

Drain-Source Voltage (VGS = 0)

600

VDGR

Drain-gate Voltage (RGS = 20kΩ)

600

VGS

Gate-Source Voltage

± 30

Drain Current (continuous) at TC = 25°C

(Note 3)

Drain Current (continuous) at TC = 100°C

5.7

(Note 3)

5.7

IDM

Note 2

Drain Current (pulsed)

(Note 3)

PTOT

Total Dissipation at TC = 25°C

115

156

Derating Factor

0.92

0.28

1.25

W/°C

Vesd(G-S)

G-S ESD (HBM C=100pF, R=1.5k

Ω)

4000

dv/dt

Note 1

Peak Diode Recovery voltage slope

4.5

V/ns

VISO

Insulation Withstand Volatge (DC)

2500

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

TO-220

I²PAK

D²PAK

TO-220FP TO-247

Unit

Rthj-case

Thermal Resistance Junction-case Max

1.09

3.6

0.8

°C/W

Rthj-pcb

Thermal Resistance Junction-pcb Max

(when mounted on minimum Footprint)

°C/W

Rthj-amb

Thermal Resistance Junction-amb Max

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

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