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DESCRIPTION CONTINUED

INPUT

OUTPUTS

D

H

L

Open

Y

Z

H

L

L

L

H

H

DRIVER

INPUTS

OUTPUT

R

H

?

L

Open

H

H = high level, L = low level , ? = indeterminate

RECEIVER

FUNCTION TABLES

DRIVER EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS

300 k

Ω

50

Ω

7 V

D Input

5

Ω

10 k

Ω

7 V

Y or Z

Output

RECEIVER EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS

7 V

7 V

R Output

5

Ω

A Input

300 k

Ω

300 k

Ω

7 V

B Input

110-

Ω LVDT Only

SN65LVDS1

SN65LVDS2

SN65LVDT2

SLLS373H – JULY 1999 – REVISED JULY 2006

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

When the SN65LVDS1 is used with an LVDS receiver (such as the SN65LVDT2) in a point-to-point connection,

data or clocking signals can be transmitted over printed-circuit-board traces or cables at very high rates with

very low electromagnetic emissions and power consumption. The packaging, low power, low EMI, high ESD

tolerance, and wide supply voltage range make the device ideal for battery-powered applications.

The SN65LVDS1, SN65LVDS2, and SN65LVDT2 are characterized for operation from –40

°C to 85°C.

2

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