SMP50 datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

SMP50 / SMTPA / TPA

3/10

Table 4: Thermal Resistances

Table 5: Electrical Characteristics (Tamb = 25°C)

Symbol

Parameter

Value

Unit

DO-15

SMA

SMB

Rth(j-a)

Junction to ambient (with recommended footprint or

with Llead = 10mm for DO-15)

100

120

100

°C/W

Rth(j-l)

Junction to leads (Llead = 10mm for DO-15)

°C/W

Symbol

Parameter

VRM

Stand-off voltage

VBR

Breakdown voltage

VBO

Breakover voltage

IRM

Leakage current

IPP

Peak pulse current

IBO

Breakover current

Holding current

Continuous reverse voltage

Leakage current at VR

Capacitance

Types

IRM @ VRM

IR @ VR

Dynamic

VBO

Static

VBO @ IBO

max.

min.

typ.

note1

note 2

note 3

note 4

note 5

note 6

µA

SMP50-62 / TPA62

SMTPA62

800

150

SMP50-68 / TPA68

SMTPA68

SMP50-100 / TPA100

SMTPA100

100

135

133

SMP50-120 / TPA120

SMTPA120

108

120

160

SMP50-130 / TPA130

SMTPA130

117

130

173

SMP50-180 / TPA180

SMTPA180

162

180

235

240

SMP50-200 / TPA200

SMTPA200

180

200

262

267

SMP50-220 / TPA220

SMTPA220

198

220

285

293

SMP50-240 / TPA240

SMTPA240

216

240

300

320

SMP50-270 / TPA270

SMTPA270

243

270

350

360

Note 1: IR measured at VR guarantee VBR min

≥ VR

Note 2: see functional test circuit 1

Note 3: see test circuit 2

Note 4: see functional holding current test circuit 3

Note 5: VR = 50V bias, VRMS=1V, F=1MHz

Note 6: VR = 2V bias, VRMS=1V, F=1MHz

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