SMP50 / SMTPA / TPA

5/10

Figure 8: Variation of thermal impedance

junction to ambient versus pulse duration

(Printed

circuit

board

FR4,

SCu=35µm,

recommended pad layout)

Figure

9:

Relative

variation

of

junction

capacitance versus reverse voltage applied

(typical values)

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

1E-1

1E+0

1E+1

1E+2

Z

(°C/W)

th(j-a)

SMTPA / TPA

SMP50

t (s)

p

1

2

5

10

20

50

100

300

0.0

0.5

1.0

1.5

2.0

2.5

V (V)

R

C[V ] / C[V =50V]

RR

T =25°C

j

F=1MHz

V

=1V

RMS

100 V / µs, di /dt < 10 A / µs, Ipp = 50 A

1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A

U

U

10 µF

2

Ω

45

Ω

66

Ω

470

Ω

83

Ω

0.36 nF

46 µH

60 µF

26 µH

12

Ω

250

Ω

46 µH

47

Ω

KeyTek 'System 2' generator with PN246I module

KeyTek 'System 2' generator with PN246I module