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REF191 数据表(PDF) 14 Page - Analog Devices

部件名 REF191
功能描述  Precision Micropower, Low Dropout Voltage References
PDF  24 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

REF191 数据表(HTML) 14 Page - Analog Devices

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REV. E
–14–
REF19x Series
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
REF19x features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
WAFER TEST LIMITS
Parameter
Symbol
Condition
Limit
Unit
INITIAL ACCURACY
REF191
VO
2.043/2.053
V
REF192
2.495/2.505
V
REF193
2.990/3.010
V
REF194
4.495/4.505
V
REF195
4.995/5.005
V
REF196
3.290/3.310
V
REF198
4.091/4.101
V
LINE REGULATION
VO / VIN
(VO + 0.5 V) < VIN < 15 V, IOUT = 0 mA
15
ppm/V
LOAD REGULATION
VO / ILOAD
0 mA < ILOAD < 30 mA, VIN = (VO + 1.3 V)
15
ppm/mA
DROPOUT VOLTAGE
VO – V+
ILOAD = 10 mA
1.25
V
ILOAD = 30 mA
1.55
V
SLEEP MODE INPUT
Logic Input High
VIH
2.4
V
Logic Input Low
VIL
0.8
V
SUPPLY CURRENT
VIN = 15 V
No Load
45
µA
Sleep Mode
No Load
15
µA
For proper operation, a 1
µF capacitor is required between the output pins and the GND pin of the REF19x. Electrical tests and wafer probe to the limits shown.
Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications
based on dice lot qualifications through sample lot assembly and testing.
DICE CHARACTERISTICS
OUTPUT
6
OUTPUT
6
2
V
3
SLEEP
4
GND
REF19x Die Size 0.041”
0.057”, 2,337 Square Mils
Substrate Is Connected to V+, Number of Transistors:
Bipolar 25, MOSFET4. Process: CBCMOS1
(@ ILOAD = 0 mA, TA = 25 C, unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +18 V
Output to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, VS + 0.3 V
Output to GND Short-Circuit Duration . . . . . . . . . Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Operating Temperature Range
REF19x . . . . . . . . . . . . . . . . . . . . . . . . . . . –40
°C to +85°C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300
°C
Package Type
JA
2
JC
Unit
8-Lead PDIP (P)
103
43
°C/W
8-Lead SOIC (S)
158
43
°C/W
8-Lead TSSOP (RU)
240
43
°C/W
NOTES
1 Absolute maximum rating applies to both DICE and packaged parts, unless
otherwise noted.
2
θ
JA is specified for worst case conditions, i.e.,
θ
JA is specified for device in socket for
PDIP, and
θ
JA is specified for device soldered in circuit board for SOIC package.



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