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REF19XFS3 数据表(PDF) 14 Page - Analog Devices |
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REF19XFS3 数据表(HTML) 14 Page - Analog Devices |
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14 / 24 page ![]() REV. E –14– REF19x Series CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the REF19x features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WAFER TEST LIMITS Parameter Symbol Condition Limit Unit INITIAL ACCURACY REF191 VO 2.043/2.053 V REF192 2.495/2.505 V REF193 2.990/3.010 V REF194 4.495/4.505 V REF195 4.995/5.005 V REF196 3.290/3.310 V REF198 4.091/4.101 V LINE REGULATION VO / VIN (VO + 0.5 V) < VIN < 15 V, IOUT = 0 mA 15 ppm/V LOAD REGULATION VO / ILOAD 0 mA < ILOAD < 30 mA, VIN = (VO + 1.3 V) 15 ppm/mA DROPOUT VOLTAGE VO – V+ ILOAD = 10 mA 1.25 V ILOAD = 30 mA 1.55 V SLEEP MODE INPUT Logic Input High VIH 2.4 V Logic Input Low VIL 0.8 V SUPPLY CURRENT VIN = 15 V No Load 45 µA Sleep Mode No Load 15 µA For proper operation, a 1 µF capacitor is required between the output pins and the GND pin of the REF19x. Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. DICE CHARACTERISTICS OUTPUT 6 OUTPUT 6 2 V 3 SLEEP 4 GND REF19x Die Size 0.041” 0.057”, 2,337 Square Mils Substrate Is Connected to V+, Number of Transistors: Bipolar 25, MOSFET4. Process: CBCMOS1 (@ ILOAD = 0 mA, TA = 25 C, unless otherwise noted.) ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +18 V Output to GND . . . . . . . . . . . . . . . . . . . . . –0.3 V, VS + 0.3 V Output to GND Short-Circuit Duration . . . . . . . . . Indefinite Storage Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Operating Temperature Range REF19x . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 °C to +85°C Junction Temperature Range P, S Package . . . . . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300 °C Package Type JA 2 JC Unit 8-Lead PDIP (P) 103 43 °C/W 8-Lead SOIC (S) 158 43 °C/W 8-Lead TSSOP (RU) 240 43 °C/W NOTES 1 Absolute maximum rating applies to both DICE and packaged parts, unless otherwise noted. 2 θ JA is specified for worst case conditions, i.e., θ JA is specified for device in socket for PDIP, and θ JA is specified for device soldered in circuit board for SOIC package. |
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