MMDF3N06VLR2 datasheet(2/4 Pages) ONSEMI

2 / 4 page

MMDF3N06VL

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

100

mAdc

Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

3.0

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance

(VGS = 5.0 Vdc, ID = 3.3 Adc)

RDS(on)

−

0.12

0.13

Drain−to−Source On−Voltage

(VGS = 5.0 Vdc, ID = 3.3 Adc)

(VGS = 5.0 Vdc, ID = 1.65 Adc, TJ = 150°C)

VDS(on)

−

0.5

0.4

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 1.65 Adc)

gFS

1.0

3.0

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

25 Vd

0Vd

Ciss

−

340

480

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

110

150

Transfer Capacitance

f = 1.0 MHz)

Crss

−

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

td(on)

−

Rise Time

(VDD = 30 Vdc, ID = 3.3 Adc,

VGS =50Vdc

−

Turn−Off Delay Time

VGS = 5.0 Vdc,

RG = 9.1 Ω)

td(off)

−

Fall Time

9.1

Ω)

−

Gate Charge

−

9.0

(VDS = 48 Vdc, ID = 3.3 Adc,

−

1.5

−

(VDS

48 Vdc, ID

3.3 Adc,

VGS = 5.0 Vdc)

−

4.3

−

3.5

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 1)

(IS = 3.3 Adc, VGS = 0 Vdc)

(IS = 3.3 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

0.84

0.67

1.2

−

Vdc

Reverse Recovery Time

trr

−

(I =33Adc V

= 0 Vdc

−

(IS = 3.3 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

−

Reverse Recovery Storage

Charge

dIS/dt = 100 A/µs)

QRR

−

0.11

−

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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