1

IPW60R037CSFD

Rev.2.0,2017-12-11

Final Data Sheet

PG-TO247-3

Drain

Pin 2

Gate

Pin 1

Source

Pin 3

MOSFET

600VCoolMOSªCSFDPowerTransistor

CoolMOS™isarevolutionarytechnologyforhighvoltagepower

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand

pioneeredbyInfineonTechnologies.TheIPW60R037CSFDisan

optimizeddevicetailoredtoaddresstheoffboardEVchargingmarket

segment.

Thankstolowgatecharge(Qg)andimprovedswitchingbehavioritoffers

highestefficiencyinthetargetedmarket.Inadditiontothatitcomesalong

withanintegratedfastbodydiodeandtremendouslyreducedreverse

recoverycharge(Qrr)leadingtohighestreliabilityinresonanttopologies.

DuetothesefeaturestheIPW60R037CSFDmeetstheefficiencyand

reliabilitystandardsoftheoffboardEVchargingstationmarketand

furthermoresupportshighpowerdensitysolutions.

Features

•Fastbodydiode

•Industry-leadingreverserecoverycharge(Qrr)

•LowestFOMRDS(on)*QgandRDS(on)*Eoss

•Costoptimization

Benefits

•Excellenthardcommutationruggednessandreliabilityinsoftswitching

applications

•Highestefficiencywithoutstandingease-of-use/performancetrade-off

•Enablingincreasedpowerdensitysolutions

•Balancedprice/performanceratiofortheEVchargingmarket

Potentialapplications

SuiteableforSoft&HardSwitchingtopologies

Optimizedforphase-shiftfull-bridge(ZVS),LLC&PFCApplications–EV

Charging

ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe

relevanttestsofJEDEC47/20/22

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate

orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS @ Tj,max

650

V

RDS(on),max

37

m

Ω

Qg,typ

136

nC

ID,pulse

236

A

Eoss @ 400V

15.6

µJ

Body diode diF/dt

1300

A/µs

Type/OrderingCode

Package

Marking

RelatedLinks

IPW60R037CSFD

PG-TO 247-3

60R037CS

see Appendix A