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2N930 数据表(PDF) 2 Page - Microsemi Corporation

部件名 2N930
功能描述  NPN LOW POWER SILICON TRANSISTOR
PDF  2 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

2N930 数据表(HTML) 2 Page - Microsemi Corporation

  2N930 Datasheet HTML 1Page - Microsemi Corporation 2N930 Datasheet HTML 2Page - Microsemi Corporation  
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2N930, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 10 µAdc, VCE = 5.0 Vdc
IC = 500 µAdc, VCE = 5.0 Vdc
IC = 10 mAdc, VCE = 5.0 Vdc
hFE
100
150
300
600
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 0.5 mAdc
VCE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 0.5 mAdc
VBE(sat)
0.6
1.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 500 µAdc, VCE = 5.0 Vdc, f = 30 MHz
h
fe
1.5
6.0
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
hfe
150
600
Small-Signal Short-Circuit Input Impedance
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz
hib
25
32
Ω
Small-Signal Short-Circuit Output Admittance
VCB = 5.0 Vdc, IE = 1.0 mAdc, f = 1.0 kHz
hob
1.0
µΩ
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
8.0
pF
Noise Figure
VCE = 5 Vdc; IC = 10
µAdc; R
g =10k
Ω
Test 1: f = 100 Hz
Test 2: f = 1.0 kHz
Test 3: f = 10 kHz
NF
5
3
3
dB
(3) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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