©

1996

DATA SHEET

Document No. P11674EJ1V0DS00 (1st edition)

Date Published August 1996 P

Printed in Japan

SILICON TRANSISTOR

2SC3603

The 2SC3603 is an NPN epitaxial transistor designed for low-

noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise

and high-gain characteristics in a wide collector current region, and

has a wide dynamic range.

FEATURES

• Low noise

: NF = 2.1 dB TYP. @ f = 2.0 GHz

• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz

ABSOLUTE MAXIMUM RATINGS (TA = 25

°°°°°C)

ELECTRICAL CHARACTERISTICS (TA = 25

°°°°°C)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

20

V

Collector to Emitter Voltage

VCEO

12

V

Emitter to Base Voltage

VEBO

3V

Collector Current

IC

100

mA

Total Power Dissipation

PT (TC = 25 °C)

580

mW

Junction Temperature

Tj

200

°C

Storage Temperature

Tstg

-65 to +150

°C

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

PACKAGE DIMENSIONS (in mm)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 10 V, IE = 0

1.0

µA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

1.0

µA

DC Current Gain

hFE

VCE = 10 V, IC = 20 mA Pulse

50

120

300

Gain Bandwidth Product

fT

VCE = 10 V, IC = 20 mA

7

GHz

Reverse Transfer Capacitance

Cre

VCB = 10 V, IE = 0, f = 1 MHz

0.5

1.0

pF

Noise Figure

NF

Note

VCE = 10 V, IC = 7 mA, f = 2 GHz

2.1

3.4

dB

Insertion Gain

|S21e|2

VCE = 10 V, IC = 20 mA, f = 2 GHz

7.0

9.0

dB

Maximum Available Gain

MAG

VCE = 10 V, IC = 20 mA, f = 2 GHz

10.0

12.0

dB

Power Gain

GA

VCE = 10 V, IC = 7 mA, f = 2 GHz

10

dB

3.8 MIN.

E

CB

E

45

°

0.5

± 0.05

2.55

± 0.2

2.1

φ

3.8 MIN.

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base