2PB709ART

©

Nexperia B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 19 March 2007

2 of 10

Nexperia

2PB709ART

45 V, 100 mA PNP general-purpose transistor

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

2PB709ART

-

plastic surface-mounted package; 3 leads

SOT23

Table 4.

Marking codes

Type number

Marking code[1]

2PB709ART

C5*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−45

V

VCEO

collector-emitter voltage

open base

-

−45

V

VEBO

emitter-base voltage

open collector

-

−6V

IC

collector current

-

−100

mA

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

−200

mA

IBM

peak base current

single pulse;

tp ≤ 1ms

-

−100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C