Nexperia

2PD601ART

50 V, 100 mA NPN general-purpose transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

60

V

VCEO

collector-emitter voltage open base

-

50

V

VEBO

emitter-base voltage

open collector

-

6

V

IC

collector current

-

100

mA

ICM

peak collector current

-

200

mA

IBM

peak base current

single pulse; tp ≤ 1 ms

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Tamb (°C)

- 75

175

125

25

75

- 25

006aaa990

100

200

300

Ptot

(mW)

0

FR4 PCB, single-sided, 35 μm copper, tin-plated and standard footprint

Fig. 1. Power derating curve

2PD601ART

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Product data sheet

1 January 2023

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