2PD602AXL_1

Product data sheet

Rev. 01 — 27 October 2008

3 of 9

Nexperia

2PD602AxL

50 V, 500 mA NPN general-purpose transistors

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2PD602AQL/DG

SX*

2PD602ARL/DG

SW*

2PD602ASL/DG

SV*

Table 5.

Marking codes …continued

Type number

Marking code[1]

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

60

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

5

V

IC

collector current

-

500

mA

ICM

peak collector current

single pulse;

tp ≤ 1ms

-1

A

IBM

peak base current

single pulse;

tp ≤ 1ms

-

200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−55

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from junction

to ambient

in free air

[1] -

-

500

K/W

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