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2SC5191 数据表(PDF) 5 Page - Renesas Technology Corp

部件名 2SC5191
功能描述  NPN SILICON RF TRANSISTOR
PDF  9 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

2SC5191 数据表(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10523EJ01V0DS
3
2SC5191
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current IC (mA)
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector to Base Voltage VCB (V)
vs. COLLECTOR TO BASE VOLTAGE
REVERSE TRANSFER CAPACITANCE
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Free Air
50
100
150
0
100
200
f = 1 MHz
24
6
8
10
0
0.4
0.8
0.6
1.2
1.0
VCE = 1 V
0.5
1.0
0
0.01
0.02
0.05
0.1
0.2
0.5
100
20
10
5
2
1
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
µ
µ
µ
µ
µ
µ
µ
µ
µ
µ
12
34
5
6
0
30
20
10
VCE = 1 V
1
2
5 10
20
50 100
0.1 0.2
0.5
0
100
200
f = 2 GHz
12
20
5
50
100
10
0
10
8
6
4
2
VCE = 3 V
VCE = 1 V
Remark The graphs indicate nominal characteristics.



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