2SC5753 datasheet(4/22 Pages) RENESAS

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Data Sheet P15659EJ1V0DS

2SC5753

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction to Ambient Resistance

Rth j-a

Note

600

°C/W

Note Mounted on 1.08 cm

× 1.0 mm (t) glass epoxy PCB

ELECTRICAL CHARACTERISTICS (TA = +25

°°°°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−−

100

Emitter Cut-off Current

IEBO

VBE = 1 V, IC = 0 mA

−−

100

DC Current Gain

hFE

Note 1

VCE = 3 V, IC = 30 mA

120

150

−

RF Characteristics

Gain Bandwidth Product

VCE = 3 V, IC = 30 mA, f = 2 GHz

−

12.0

−

GHz

Insertion Power Gain

S21e2 VCE = 3 V, IC = 30 mA, f = 2 GHz

8.0

10.5

−

Noise Figure

VCE = 3 V, IC = 7 mA, f = 2 GHz,

ZS = Zopt

−

1.7

2.5

Reverse Transfer Capacitance

Cre

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

−

0.42

0.7

Maximum Available Power Gain

MAG

Note 3

VCE = 3 V, IC = 30 mA, f = 2 GHz

−

13.5

−

Linear Gain

VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,

Pin =

−5 dBm

−

13.0

−

Gain 1 dB Compression Output Power

PO (1 dB)

VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,

Pin = 7 dBm

−

18.0

−

dBm

Collector Efficiency

ηC

VCE = 2.8 V, ICq = 10 mA, f = 1.8 GHz,

Pin = 7 dBm

−

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MAG =

hFE CLASSIFICATION

Rank

Marking

R55

hFE Value

75 to 150

(K –

√√√√ (K2 – 1) )

S21

S12

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