2SD2425 datasheet(4/8 Pages) RENESAS

部件名	2SD2425

功能描述	SILICON TRANSISTOR

PDF	8 Pages

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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Data Sheet D16157EJ1V0DS

2SD2425

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 50 V, IE = 0

µA

Emitter cutoff current

IEBO

VEB = 6.0 V, IC = 0

µA

DC current gain

hFE1

VCE = 1.0 V, IC = 0.1 A

180

−

DC current gain

hFE2

VCE = 1.0 V, IC = 2.0 A

100

200

400

−

DC current gain

hFE3

VCE = 2.0 V, IC = 5.0 A

150

−

Collector saturation voltage

VCE(sat)

IC = 2.0 A, IB = 0.2 A

300

Base saturation voltage

VBE(sat)

IC = 2.0 A, IB = 0.2 A

0.9

1.2

Turn-on time

ton

0.6

µs

Storage time

tstg

0.8

µs

Fall time

IC = 2.0 A, VCC= 10 V

IB1 =

−IB2 = 0.2 A

RL = 5.0

Ω

0.08

µs

hFE CLASSIFICATION

Marking

AB1

AB2

AB3

hFE2

100 to 200

160 to 320

200 to 400

TYPICAL CHARACTERISTICS (Ta = 25

°°°°C)

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