Nexperia

PESD2CANFD36VT-Q

ESD protection for in-vehicle networks

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

Tamb = 25 °C

-

-

36

V

VBR

breakdown voltage

IR = 10 mA; Tamb = 25 °C

[1]

37

41

47

V

IRM

reverse leakage current VRWM = 36 V; Tamb = 25 °C

[1]

-

1

50

nA

f = 1 MHz; VR = 2.5 V; Tamb = 25 °C

[1]

-

5.2

6

pF

Cd

diode capacitance

f = 1 MHz; VR = -2.5 V; Tamb = 25 °C

[1]

-

5.2

6

pF

f = 1 MHz; VR = 2.5 V; Tamb = 25 °C

[2]

-

0.5

-

%

ΔCd/Cd

diode capacitance

matching

f = 1 MHz; VR = -2.5 V; Tamb = 25 °C

[2]

-

0.5

-

%

IPP = 1 A; tp = 8/20 µs; Tamb = 25 °C

[3] [1] -

45

-

V

VCL

clamping voltage

IPP = 16 A; tp = 100 ns; Tamb = 25 °C

[4] [1] -

50

-

V

Rdyn

dynamic resistance

IR = 10 A; tp = 100 ns; Tamb = 25 °C

[4] [1] -

1

-

Ω

[1] Measured from pin 1 or 2 to pin 3.

[2] ∆Cd is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3.

[3] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[4] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

aaa-032449

VRWM

VRWM

IPP

IPP

VCL

Vt1(transient)

dI

dV

dV

dI

dV

dI

Vt1(transient)

V

I

VCL

Rdyn=

dV

dI

Rdyn =

Vh

Vh

Fig. 3. Transient characteristics for a bidirectional ESD

protection device

VR (V)

-40

40

20

-20

0

aaa-034173

4

5

3

2

1

6

7

Cd

(pF)

0

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

PESD2CANFD36VT-Q

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Nexperia B.V. 2022. All rights reserved

Product data sheet

13 November 2022

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