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MOS FIELD EFFECT TRANSISTOR

2SK3386

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No.

D14471EJ4V0DS00 (4th edition)

Date Published

August 2006 NS CP(K)

Printed in Japan

1999, 2000

DESCRIPTION

The 2SK3386 is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Low On-state Resistance

RDS(on)1 = 21 m

Ω MAX. (VGS = 10 V, ID = 17 A)

RDS(on)2 = 36 m

Ω MAX. (VGS = 4.0 V, ID = 17 A)

• Low Ciss: Ciss = 2100 pF TYP.

• Built-in Gate Protection Diode

• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage

VDSS

60

V

Gate to Source Voltage

VGSS

±20

V

Drain Current (DC)

ID(DC)

±34

A

Drain Current (Pulse)

Note1

ID(pulse)

±120

A

Total Power Dissipation (TC = 25°C)

PT

40

W

Total Power Dissipation (TA = 25°C)

PT

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

28

A

Single Avalanche Energy

Note2

EAS

78

mJ

Notes 1. PW

≤ 10

μs, Duty cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20

→ 0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3386

TO-251 (MP-3)

2SK3386-Z

TO-252 (MP-3Z)

(TO-251)

(TO-252)

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