2004 Feb 05

2

NXP Semiconductors

Product data sheet

NPN medium frequency transistor

BFS20

FEATURES

• I

C(max) = 25 mA

• V

CEO(max) = 20 V

• Very low feedback capacitance (typ. 350 fF).

APPLICATIONS

• IF and VHF thick and thin-film circuit applications.

DESCRIPTION

NPN medium frequency transistor in a SOT23 plastic

package.

MARKING

Note

1.

* = p : Made in Hong Kong.

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER

MARKING CODE(1)

BFS20

G1*

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM255

Top view

2

3

1

ORDERING INFORMATION

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Transistor mounted on an FR4 printed-circuit board.

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

BFS20

−

plastic surface mounted package; 3 leads

SOT23

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

30

V

VCEO

collector-emitter voltage

open base

−

20

V

VEBO

emitter-base voltage

open collector

−

4

V

IC

collector current (DC)

−

25

mA

ICM

peak collector current

−

25

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

250

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C