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STISO620 数据表(PDF) 5 Page - STMicroelectronics |
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STISO620 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 20 page ![]() Symbol Parameter Test condition Min. Typ. Max. Unit tf Output fall time CL = 20 pF Tamb = 25 °C See Figure 3 2 ns tDHL Propagation delay H to L Tamb = 25°C See Figure 3 25 ns Full temperature range 42 tDLH Propagation delay L to H Tamb = 25°C See Figure 3 25 ns Full temperature range 42 tPOWUP Power up time 30 µs tREFRESH Refresh time 1 2 µs tWD Watchdog timeout 2 8 µs PWD Pulse width distortion |tDHL – tDLH| Tamb = 25°C 1.7 2.6 ns Full temperature range 3 CMTI Common mode transient immunity (1) 50 65 kV/µs 1. Not tested in production. Limit is guaranteed by characterization on a limited number of samples and simulations. Note: Testing conditions: Typical values are defined at Tamb = 25°C and VDD1 = VDD2 = 3 V, minimum and maximum limits applies to the full temperature range (Tested in production at Tamb = 25°C and the limits in the full temperature range are guaranteed by characterization on a limited quantity of samples), unless otherwise specified. STISO620 Electrical characteristics DS14110 - Rev 2 page 5/20 |
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