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STM8AF/P6389 数据表(PDF) 88 Page - STMicroelectronics |
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STM8AF/P6389 数据表(HTML) 88 Page - STMicroelectronics |
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88 / 116 page  Electrical characteristics STM8AF6388 88/116 DocID031156 Rev 1 Electromagnetic interference (EMI) Emission tests conform to the IEC 61967-2 standard for test software, board layout and pin loading. Absolute maximum ratings (electrical sensitivity) Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electrostatic discharge (ESD) Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test conforms to the JESD22-A114A/A115A standard. For more details, refer to the application note AN1181. Table 44. EMI data Symbol Parameter Conditions Unit General conditions Monitored frequency band Max fCPU(1) 1. Guaranteed by characterization results, not tested in production. 8 MHz 16 MHz 24 MHz SEMI Peak level VDD = 5 V, TA = 25 °C, LQFP80 package conforming to IEC 61967-2 0.1 MHz to 30 MHz 15 17 22 dBµV 30 MHz to 130 MHz 18 22 16 130 MHz to 1 GHz -1 3 5 EMI level - 2 2.5 2.5 Table 45. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) 1. Guaranteed by characterization results, not tested in production Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = 25 °C, conforming to JESD22-A114 3A 4000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = 25 °C, conforming to JESD22-C101 3 500 VESD(MM) Electrostatic discharge voltage (charge device model) TA = 25 °C, conforming to JESD22-A115 B 200 |
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