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STPST12H100 数据表(PDF) 2 Page - STMicroelectronics |
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STPST12H100 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, with 2 anode terminals short-circuited) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(AV) Average forward current, δ = 0.5, square wave Tc = 155 °C 12 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 230 A IAS Single pulse avalanche current(1) Tj = 25°C, L = 300 µH, VDD = 15 V 16 A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(2) +175 °C 1. Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform. 2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameter Symbol Parameter Typ. value Unit Rth(j-c) Junction to case 1.0 °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR(1) Reverse leakage current Tj = 125 °C VR = 70 V - 2.3 6.8 mA Tj = 25 °C VR = 100 V - 24 µA Tj = 125 °C - 4.2 14 mA VF(2) Forward voltage drop Tj = 25 °C IF = 6 A - 0.535 0.595 V Tj = 125 °C - 0.470 0.525 Tj = 25 °C IF = 12 A - 0.640 0.710 Tj = 125 °C - 0.570 0.625 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.425 x IF(AV) + 0.0167 x IF2(RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode STPST12H100 Characteristics DS14185 - Rev 1 page 2/9 |
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