1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(AV)

Average forward current, δ = 0.5 square

wave

SOD128Flat Tl = 130 °C

3

A

SMB Flat

Tl = 140 °C

IFSM

Surge non repetitive forward current

SOD128Flat

tp = 10 ms sinusoidal

50

A

SMB Flat

55

IAS

Single pulse avalanche current(1)

6

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(2)

+175

°C

1. Please refer to Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test) and

Figure 2. Unclamped inductive switching test circuit for the unclamped inductive switching test circuit, and waveform.

2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal resistance parameter

Symbol

Parameter

Typ. value

Unit

Rth(j-l)

Junction to lead

SOD128Flat

13

°C/W

SMB Flat

10

For more information, please refer to the following application note:

•

AN5088: Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 125 °C

VR = 70 V

-

0.45

1.4

mA

Tj = 25 °C

VR = 100 V

-

5.7

µA

Tj = 125 °C

-

0.8

3.0

mA

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 1.5 A

-

0.565

0.625

V

Tj = 125 °C

-

0.500

0.555

Tj = 25 °C

IF = 3 A

-

0.685

0.755

Tj = 125 °C

-

0.600

0.650

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.46 x IF(AV) + 0.0633 x IF2(RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPST3H100

Characteristics

DS13610 - Rev 2

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