1

Characteristics

Table 1. Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

Tc = 114 °C

4

A

IT AV

RMS on-state average current (full sine wave)

Tc = 114 °C

2.5

A

ITSM

Non repetitive surge peak on-state current (full cycle,

Tj initial = 25 °C)

t = 8.3 ms

33

A

t = 10 ms

30

I2t

I2t value for fusing

tp = 10 ms

9

A2s

dl/dt

Critical rate of rise of on-state current, IG = 2 x IGT, tr

≤ 100 ns, f = 60 Hz

Tj = 125 °C

50

A/µs

VDRM/VRRM

Repetitive peak off-state voltage

Tj = 125 °C

600

V

VDSM/VRSM

Non Repetitive peak off-state voltage, 10 ms

750

V

IGM

Maximum peak gate current

tp = 20 µs, Tj = 125 °C

1.2

A

PGM

Maximum gate power dissipation

0.5

W

Tstg

Storage temperature range

-40 to +125

°C

Tj

Operating junction temperature range

-40 to +125

°C

TL

Maximum lead temperature for soldering during 10 s

260

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Value

Unit

IGT(1)

VD = 12 V, RL = 140 Ω

Min.

20

µA

Max.

50

VGT

Max.

0.8

V

VGD

VD = VDRM, RL = 3.3 kΩ

Tj = 125 °C

Min.

0.1

V

VRGM

IRG = 10 µA

Max.

8

V

IL

IG = 1.2 x IGT

Max.

6

mA

IH (2)

IT = 500 mA, gate open

Max.

5

mA

dV/dt (2)

VD = 67 % VDRM, RGK = 1 kΩ

Tj = 110 °C

Min.

15

V/µs

1. For both polarities of OUT pin referenced to COM pin.

2. For both polarities of A2 referenced to A1.

Table 3. Static characteristics

Symbol

Test conditions

Tj

Value

Unit

VTM (1)

ITM = 8 A, tp = 380 µs

25 °C

Max.

1.8

V

VTO (1)

Threshold voltage

125 °C

Max.

0.85

V

RD(1)

Dynamic resistance

125 °C

Max.

100

mΩ

IDRM/IRRM

VD = VDRM; VR = VRRM; RGK = 1 kΩ

25 °C

Max.

5

µA

125°C

1

mA

1. For both polarities of A2 referenced to A1.

X0405MB

Characteristics

DS14025 - Rev 1

page 2/11