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STGAP2GSC 数据表(PDF) 4 Page - STMicroelectronics

部件名 STGAP2GSC
功能描述  Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2GSC 数据表(HTML) 4 Page - STMicroelectronics

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3
Electrical data
3.1
Absolute maximum ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Test
condition
Min.
Max.
Unit
VDD
Logic supply voltage vs. GND
- 0.3
6
V
VLOGIC
Logic pins voltage vs. GND
- 0.3
6
V
VH
Positive supply voltage
(VH vs. GNDISO)
- 0.3
15
V
VOUT
Voltage on gate driver outputs
(GON, GOFF vs. GNDISO)
- 0.3
VH + 0.3
V
TJ
Junction temperature
- 40
150
°C
TS
Storage temperature
- 50
150
°C
ESD
HBM (human body model)
2
kV
3.2
Recommended operating conditions
Table 3. Recommended operating conditions
Symbol
Parameter
Test conditions
Min.
Max.
Unit
VDD
Logic supply voltage vs. GND
3.1
5.5
V
VLOGIC
Logic pins voltage vs. GND
0
5.5
V
VH
Positive supply voltage
(VH vs. GNDISO)
Max(VHon)
13
V
dVH/dt
VH Power-up transient
VH = 0 to 6 V
100
μs
FSW
Maximum switching frequency.(1)
2
MHz
TJ
Operating Junction Temperature
-40
125
°C
1. Actual limit depends on power dissipation and TJ
3.3
Thermal data
Table 4. Thermal data
Symbol
Parameter
Test condition
Value
Unit
Rth(JA)
Thermal resistance junction to ambient
JEDEC 2s2p PCB in
still air
130
°C/W
STGAP2GS
Electrical data
DS14152 - Rev 1
page 4/20



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