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STGAP2GSCTR 数据表(PDF) 8 Page - STMicroelectronics

部件名 STGAP2GSCTR
功能描述  Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2GSCTR 数据表(HTML) 8 Page - STMicroelectronics

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6
Functional description
6.1
Gate driving power supply and UVLO
The STGAP2GS is a flexible and compact gate driver with 3 A output current and rail-to-rail outputs. The device
allows implementation of either unipolar or bipolar gate driving.
Figure 3. Power supply configuration for unipolar and bipolar gate driving
VDD
I
S
O
L
A
T
I
O
N
VH
GOFF
GNDISO
VDD
GND
IN+
IN-
GON
+
VH
VDD
+
VH
+
VL
I
S
O
L
A
T
I
O
N
VH
GOFF
GNDISO
VDD
GND
IN+
IN-
GON
Unipolar gate driving
Bipolar gate driving
Undervoltage protection is available on VH supply pin. A fixed hysteresis sets the turn-off threshold, thus avoiding
intermittent operation.
When VH voltage falls below the VHoff threshold, the output buffer enters a “safe state”. When VH voltage
reaches the VHon threshold, the device returns to normal operation and sets the output according to actual input
pins status.
The VDD and VH supply pins must be properly filtered with local bypass capacitors. The use of capacitors with
different values in parallel provides both local storage for impulsive current supply and high-frequency filtering.
The best filtering is obtained by using low-ESR SMT ceramic capacitors and are therefore recommended. A 100
nF ceramic capacitor must be placed as close as possible to each supply pin, and a second bypass capacitor with
value in the range between 1 µF and 10 µF should be placed close to it.
6.2
Power-up, power-down and “safe state”
The following conditions define the “safe state”:
GOFF = ON state;
GON = High Impedance;
Such conditions are established at the end of the power-up of the isolated side (VH < VHon) and maintained until
the device power down phase (VH < VHoff), regardless of the value of the input pins.
When driving GaN switches, it is recommended to provide a smooth voltage transient to the VH supply pin during
power ON, and to limit the VH rising slope according to Table 3.
The device integrates a structure which clamps the driver output to a voltage not higher than SafeClp when VH
voltage is not high enough to actively turn the internal GOFF MOSFET on. If VH positive supply pin is floating or
not supplied the GOFF pin is therefore clamped to a voltage smaller than SafeClp.
If the supply voltage VDD of the control section of the device is not supplied, the output is put in safe state, and
remains in such condition until the VDD voltage returns within operative conditions.
After power-up of both isolated and low voltage sides, the device output state depends on the status of the input
pins.
STGAP2GS
Functional description
DS14152 - Rev 1
page 8/20



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