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STGAP2GSNCTR 数据表(PDF) 6 Page - STMicroelectronics

部件名 STGAP2GSNCTR
功能描述  Isolated 3 A single gate driver for Enhancement mode GaN FETs
PDF  20 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2GSNCTR 数据表(HTML) 6 Page - STMicroelectronics

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Symbol
Pin
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IQDDSBY
VDD
Standby VDD quiescent
supply current
Standby mode
40
65
µA
Logic inputs
Vil
IN+, IN-
Low-level logic threshold
voltage
0.29·VDD 0.33·VDD 0.37·VDD
V
Vih
IN+, IN-
High-level logic threshold
voltage
0.58·VDD 0.66·VDD 0.70·VDD
V
IINh
IN+, IN-
INx logic “1” input bias
current
INx = 5 V
33
50
70
µA
IINl
IN+, IN-
INx logic “0” input bias
current
INx = GND
1
µA
Rpd
IN+, IN-
Inputs pull-down resistors INx = 5 V
70
100
150
kΩ
Driver buffer section
IGON
GON
Source short-circuit
current
TJ = 25 °C
2
A
TJ = -40 ÷ +125 °C (1)
1.5
2.5
VGONH
GON
Source output high-level
voltage
IGON = 100 mA
VH-0.15
VH-0.12
V
RGON
GON
Source RDS_ON
IGON = 100 mA
1.25
1.5
Ω
IGOFF
GOFF
Sink short-circuit current
TJ = 25 °C
3
A
TJ = -40 ÷ +125 °C (1)
2.25
3.75
VGOFFL
GOFF
Sink output low-level
voltage
IGOFF = 100 mA
60
80
mV
RGOFF
GOFF
Sink RDS_ON
IGOFF = 100 mA
0.6
0.8
Ω
Overtemperature protection
TSD
Shutdown temperature (1)
170
°C
Thys
Temperature hysteresis (1)
20
°C
Standby
tSTBY
Standby time
See Section 6.6
200
280
500
µs
tWUP
Wake-up time
See Section 6.6
10
20
35
µs
tawake
Wake-up delay
See Section 6.6
1
2
3
µs
tstbyfilt
Standby filter
See Section 6.6
200
280
800
ns
1. Characterization data, not tested in production
STGAP2GSN
Electrical
characteristics
DS14151 - Rev 1
page 6/20



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