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STGAP2HDM 数据表(PDF) 10 Page - STMicroelectronics

部件名 STGAP2HDM
功能描述  Galvanically isolated 4 A dual gate driver
PDF  24 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGAP2HDM 数据表(HTML) 10 Page - STMicroelectronics

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6
Functional description
6.1
Gate driving power supply and UVLO
The STGAP2HD is a flexible and compact gate driver with 4 A output current and rail-to-rail outputs. The device
allows to implement either unipolar or bipolar gate driving.
Figure 3. Power supply configuration for unipolar and bipolar gate driving
Unipolar gate driving
Bipolar gate driving
VH
VL
GON_A
GNDISO_B
VH_B
GON_B
GOFF_B
CLAMP_B
GNDISO_A
VH_A
GOFF_A
CLAMP_A
VDD
GND
INA
INB
SD
iLOCK
BRAKE
I
S
O
L
A
T
I
O
N
Control
Logic
VH
VL
VH
VH
GON_A
GNDISO_B
VH_B
GON_B
GOFF_B
CLAMP_B
GNDISO_A
VH_A
GOFF_A
CLAMP_A
VDD
GND
INA
INB
SD
iLOCK
BRAKE
I
S
O
L
A
T
I
O
N
Control
Logic
Undervoltage protection is available on VH_x supply pin. A fixed hysteresis sets the turn-off threshold, thus
avoiding intermittent operation.
When VH_x voltage goes below the VHoff threshold, the output buffer goes into “safe state”. When VH_x voltage
reaches the VHon threshold, the device returns to normal operation and sets the output according to actual input
pins status.
The VDD and VH_x supply pins must be properly filtered with local bypass capacitors. The use of capacitors with
different values in parallel provides both local storage for impulsive current supply and high-frequency filtering.
The best filtering is obtained by using low-ESR SMT ceramic capacitors, which are therefore recommended. A
100 nF ceramic capacitor must be placed as close as possible to each supply pin, and a second bypass capacitor
with value in the range between 1 μF and 10 μF should be placed close to it.
6.2
Power-up, power-down and ‘safe state’
The following conditions define the “safe state”:
GOFF = ON state
GON = high impedance
Such conditions are maintained at power-up of the isolated side (VH_x < VHon) and during whole device power-
down phase (VH < VHoff), regardless of the value of the input pins.
The device integrates a structure which clamps the driver output to a voltage not higher than SafeClp when VH
voltage is not high enough to actively turn the internal GOFF MOSFET on. If VH_x positive supply pin is floating
or not supplied, the GOFF pin is therefore clamped to a voltage smaller than SafeClp.
If the supply voltage VDD of the control section of the device is not supplied, the output is put in safe state, and
remains in such condition until the VDD voltage returns within operative conditions.
After power-up of both isolated and low voltage side the device output state depends on the input pins' status.
STGAP2HD
Functional description
DS13652 - Rev 2
page 10/24



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