1.1

Characteristics (curves)

Figure 3. Maximum peak power dissipation versus initial

junction temperature

0

100

200

300

400

500

0

25

50

75

100

125

150

175

PPP (W)

Tj (°C)

10/1000 µs

Figure 4. Maximum peak pulse power versus exponential

pulse duration

0.1

1

10

0.01

0.1

1

10

P

PP (kW)

Tj initial = 25 °C

t (ms)

p

Figure 5. Maximum peak pulse current versus clamping

voltage

0.1

1

10

100

1000

1

10

100

1000

IPP (A)

VCL (V)

8/20 µs

10/1000 µs

Figure 6. Dynamic resistance versus pulse duration

0.001

0.01

0.1

1

10

100

0.01

0.1

1

10

RD (Ω)

t p(ms)

SM4T6V7AY/CAY

SM4T30AY/CAY

SM4T82AY/CAY

Figure 7. Junction capacitance versus reverse applied

voltage (unidirectional type)

10

100

1000

10000

1

10

100

1000

C (pF)

SM4T6V7AY

SM4T30AY

f = 1 MHz

Vosc = 30 mVRMS

Tj = 25 °C

SM4T82AY

VR (V)

Figure 8. Junction capacitance versus applied voltage

(bidirectional type)

10

100

1000

10000

1

10

100

1000

C (pF)

SM4T6V7AY

SM4T30AY

f = 1 MHz

Vosc = 30 mVRMS

Tj = 25 °C

SM4T82AY

VR (V)

SM4TxxAY, SM4TxxCAY

Characteristics (curves)

DS6927 - Rev 5

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