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CLT03-2Q3 数据表(PDF) 3 Page - STMicroelectronics |
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CLT03-2Q3 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 24 page ![]() 2 Characteristics 2.1 Circuit block diagram Figure 3. Channel diagram 2.2 Absolute maximum ratings Stresses outside the absolute ratings range may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions is not implied. Exposure to absolute rating conditions for extended periods may affect device reliability. Table 3. Absolute maximum ratings Symbol Parameter name Value Unit VPP Peak pulse voltage, HBM, MIL STD 883J-Method 3015.9 ±2 kV VPP (1)(2) Peak pulse voltage (pins INA, INATTL & INB), IEC 61000-4-2 (contact) ±2 kV VIN Input voltage -60 to +60 V VISO CLT03-2Q3: Isolation between channel 1 and 2 230 VAC Tj Junction temperature -30 to +125 °C TSTG Storage temperature -55 to +150 °C 1. See application schematic 2. Performance level depends on layout and environment CLT03-2Q3, CLT03-1SC3 Characteristics DS12302 - Rev 13 page 3/24 |
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