1

Characteristics

Table 1. Absolute maximum ratings (Tamb = 25 °C)

Symbol

Parameter

Value

Unit

VPP

Peak pulse voltage

IEC 61000-4-2 contact discharge:

ECMF2-40A100N6

ECMF4-40A100N10

±9

±10

kV

IEC 61000-4-2 air discharge:

ECMF2-40A100N6

ECMF4-40A100N10

±20

±25

kV

IRMS

Maximum RMS current

100

mA

Top

Maximum operating temperature range

-55 to +125

°C

Tstg

Storage temperature range

-55 to +150

TL

Maximum temperature for soldering during 10 s

260

Figure 1. Electrical characteristics (definitions)

VCL

VBR

VRM

IRM

IR

IPP

V

I

VRM

Maximum stand-off voltage

VCL

Clamping voltage at peak pulse current IPP

IRM

Leakage current at VRM

IPP

Peak pulse current

VBR

Breakdown voltage

CDIODE ESD diode capacitance

RDC

DC serial resistance

fC

Differential cut off frequency

Table 2. Electrical characteristics (Tamb = 25 °C)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBR

Breakdown voltage

IR = 1 mA

5.3

5.8

V

IRM

Leakage current

VRM = 3.6 V per line

< 1

50

nA

VRM = 5 V per line

3

70

VRM

Reverse working voltage

5

V

RDC

DC serial resistance, IDC = 20 mA

3.0

Ω

fc

Differential mode cut-off frequency(1)

10.7

GHz

VCL

Reverse clamping voltage

TLP measurement (pulse duration

100 ns), 16 A IPP

20.5

V

8 kV contact discharge after 30 ns,

IEC 61000-4-2

18

CDIODE

Capacitance

VBIAS = 0 V, F = 2.5 GHz to 9 GHz,

VOSC = 30 mV

0.25

0.40

pF

RD

Dynamic resistance, TLP measurement (pulse duration 100 ns)

0.8

Ω

1. Attenuation at 10 MHz as reference.

ECMF2-40A100N6, ECMF4-40A100N10

Characteristics

DS13913 - Rev 3

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