2

Electrical characteristics

Note:

For PNP transistor voltage and current polarity is reversed.

Table 3. Electrical characteristics for NPN (Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Max.

Unit

ICBO

Collector-base cut-off current

(IE = 0)

VCB = 60 V

100

nA

VCB = 60 V, Tamb = 150 °C

10

µA

IEBO

Emitter-base cut-off current

(IC = 0)

VEB = 6 V

100

nA

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = 100 μA

60

V

V(BR)CEO

Collector-emitter breakdown

voltage (IB = 0)

IC = 1 mA

60

V

V(BR)EBO

Emitter-base breakdown

voltage

IE = 10 μA

6

V

VBE(on)

Base-emitter on voltage

VCE = 2 V, IC = 100 mA

600

720

mV

VCE(sat) (1)

Collector-emitter saturation

voltage

IC = 0.8 A, IB = 40 mA

160

mV

IC = 2 A IB = 100 mA

380

mV

hFE (1)

DC current gain

IC = 100 mA, VCE = 2 V

100

IC = 100 mA, VCE = 2 V, Tamb = -55 °C

40

IC = 1 A, VCE = 2 V

160

400

ton

Turn on-time

VCC = 10 V, IC = 0.8 A, Ibon = 80 mA,

Iboff = -80 mA(2)

175

ns

toff

Turn off-time

2.5

µs

COBO

Output capacitance

VCB = 10 V, IE = 0 A, f = 1 MHz

45

pF

1. Pulse test: pulse duration ≤ 300 μs, duty cycle ≤ 2%.

2. Resistive load

JANS2ST3360K

Electrical characteristics

DS11305 - Rev 3

page 3/12