Nexperia

PESD2CANFD24VT-Q

ESD protection for in-vehicle networks

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

Tamb = 25 °C

-

-

24

V

VBR

breakdown voltage

IR = 10 mA; Tamb = 25 °C

[1]

25.5

30

35.5

V

IRM

reverse leakage current VRWM = 24 V; Tamb = 25 °C

[1]

-

1

50

nA

f = 1 MHz; VR = 2.5 V; Tamb = 25 °C

[1]

-

5.2

6

pF

Cd

diode capacitance

f = 1 MHz; VR = -2.5 V; Tamb = 25 °C

[1]

-

5.2

6

pF

f = 1 MHz; VR = 2.5 V; Tamb = 25 °C

[2]

-

0.5

-

%

ΔCd/Cd

diode capacitance

matching

f = 1 MHz; VR = -2.5 V; Tamb = 25 °C

[2]

-

0.5

-

%

VCL

clamping voltage

IPP = 1 A; tp = 8/20 µs; Tamb = 25 °C

[3] [1] -

33

42

V

Rdyn

dynamic resistance

IR = 10 A; tp = 100 ns; Tamb = 25 °C

[4] [1] -

0.7

-

Ω

[1] Measured from pin 1 or 2 to pin 3.

[2] ∆Cd is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured between pin 2 and pin 3.

[3] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[4] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008

006aaa676

-VCL -VBR -VRWM

VCL

VBR

VRWM

-IRM

IRM

-IR

IR

-IPP

IPP

-

+

Fig. 3. V-I characteristics for a bidirectional ESD

protection diode

VR (V)

-24

24

12

-12

aaa-030683

7

Cd

(pF)

0

1

2

3

4

5

6

f = 1 MHz; Tamb = 25 °C

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

PESD2CANFD24VT-Q

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Product data sheet

7 September 2022

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