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STL320N4LF8 数据表(PDF) 2 Page - STMicroelectronics |
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STL320N4LF8 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 16 page ![]() 1 Electrical ratings TC = 25 °C, unless otherwise specified. Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V ID(1) Drain current (continuous) at TC = 25 °C 360 A Drain current (continuous) at TC = 100 °C 254 IDM(2)(3) Drain current (pulsed), tP = 10 µs 1440 A PTOT Total power dissipation at TC = 25 °C 188 W IAS Single pulse avalanche current (pulse width limited by TJ max.) 60 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = 60 A, RGmin = 25 Ω) 590 mJ TJ Operating junction temperature range -55 to 175 °C Tstg Storage temperature range 1. The value is relevant to RthJC. Current limitations will come from the operative conditions, such as temperature and thermal resistance of the PCB. 2. Specified by design and evaluated by characterization, not tested in production. 3. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit RthJA(1) Thermal resistance, junction-to-ambient max. (on 2s2p FR-4 board vertical in still air) 20 °C/W RthJC Thermal resistance, junction-to-case max. 0.8 °C/W 1. Defined according to JEDEC standards (JESD51-5, -7). STL320N4LF8 Electrical ratings DS13908 - Rev 2 page 2/16 |
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